Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh⢠technology: MDmesh II Plus⢠low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
⢠Extremely low gate charge
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener-protected
Applications
⢠Switching applications
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