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A2V64S40 Datasheet

Part NameA2V64S40 ETC1
ETC1 
Description64M Single Data Rate Synchronous DRAM
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General Description
The A2V64S40CTP is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
   - CAS latency (2 & 3)
   - Burst length (1, 2, 4, 8 & Full page)
   - Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going
   edge of the system clock
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Burst read single write operation
• LDQM & UDQM for masking

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A2V64S40 64M Single Data Rate Synchronous DRAM

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