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ACE1551BJM-H Даташит

Номер в каталогеACE1551BJM-H ACE
ACE Technology Co., LTD. ACE
Компоненты ОписаниеN-Channel Enhancement Mode Field Effect Transistor
ACE1551B image

The ACE1551B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers.

• VDS =20V
• ID=0.7A
• RDS(ON)<360mΩ (VGS=4.5V)
• RDS(ON)<420mΩ (VGS=2.5V)
• RDS(ON)<560mΩ (VGS=1.8V)


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