These devices are designed for general purpose and low speed switching applications.
Features
⢠High DC Current Gain â hFE = 2500 (typ.) at IC = 4.0
⢠CollectorâEmitter Sustaining Voltage at 100 mAdc
VCEO(sus)
= 80 Vdc (min) â BDX33B, BDX334B
= 100 Vdc (min) â BDX33C, BDX334C
⢠Low CollectorâEmitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
â BDX33B, 33C/34B, 34C
⢠Monolithic Construction with BuildâIn BaseâEmitter Shunt Resistors
⢠These Devices are PbâFree and are RoHS Compliant*
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