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BTS621L1E3230 Datasheet - Infineon Technologies

BTS621L1E3230 Datasheet PDF Infineon Technologies

Part Name
BTS621L1E3230

Other PDF
  not available.

page
15 Pages

File Size
330.1 kB

MFG CO.
Infineon
Infineon Technologies Infineon

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.

Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection

Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
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Smart Two Channel Highside Power Switch
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Smart Two Channel Highside Power Switch
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Smart Two Channel Highside Power Switch
Siemens AG
Smart Two Channel Highside Power Switch
Siemens AG
Smart Two Channel Highside Power Switch
Siemens AG

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