MFG CO.
Philips Electronics
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS⢠technology, featuring very low on-state resistance.
Features
â TrenchMOS⢠technology
â Q101 compliant
â 175 °C rated
â Standard level compatible.
Applications
â Automotive and general purpose power switching:
â 12 V and 24 V loads
â Motors, lamps and solenoids.
Part Name
Description
PDF
MFG CO.
TrenchMOS⢠standard level FET
Nexperia B.V. All rights reserved
TrenchMOS⢠standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS standard level FET
NXP Semiconductors.
N-channel TrenchMOS standard level FET
NXP Semiconductors.