Description
The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Features
Approvals:
● BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
● FIMKO (SETI): EN 60950, Certificate number 12399
● Underwriters Laboratory (UL) 1577 recognized, file number E-76222
● VDE 0884, Certificate number 94778

VDE 0884 related features:
● Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
● Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
● Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
● Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
● Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
● Thickness through insulation ≥ 0.75 mm

General features:
● Isolation materials according to UL94-VO
● Pollution degree 2(DIN/VDE 0110 part 1 resp. IEC 664)
● Climatic classification 55/100/21 (IEC 68 part 1)
● Special construction:
   Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection
● Low temperature coefficient of CTR
● CTR offered in 3 groups
● Coupling System A

Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
● For appl. class I – IV at mains voltage ≤ 300 V
● For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

  Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.