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CS4N60FA9TDY Datasheet

Part NameCS4N60FA9TDY ETC
ETC 
DescriptionSilicon N-Channel Power MOSFET
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[WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.]

General Description:
CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.

Features:
● Fast Switching
● ESD Improved Capability
● Low Gate Charge (Typical Data: 13nC)
● Low Reverse transfer capacitances(Typical: 2.2pF)
● 100% Single Pulse avalanche energy Test

Applications:
   Power switch circuit of adaptor and charger.

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