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D1NB80-1 Datasheet

Part NameD1NB80-1 ST-Microelectronics
STMicroelectronics ST-Microelectronics
DescriptionN-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET
D1NB80-1 Datasheet PDF : D1NB80-1 pdf     
STD1NB80-1 image

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


TYPICAL RDS(on) = 16 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT

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