General Description
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Features
âºHigh input impedance
âºLow input capacitance
âºFast switching speeds
âºLow on resistance
âºFree from secondary breakdown
âºLow input and output leakage
Applications
âºNormally-on switches
âºSolid state relays
âºConverters
âºLinear amplifiers
âºConstant current sources
âºPower supply circuits
âºTelecom
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