Description
The EDS2504AP is a 256M bits SDRAM organized as 16,777,216 words × 4 bits × 4 banks. The EDS2508 AP is a 256M bits SDRAM organized as 8,388,608 words × 8 bits × 4 banks. The EDS2516 AP is a 256M bits SDRAM organized as 4194304 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54- pin plastic TSOP (II).

Features
• 3.3V power supply
• Clock frequency: 133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length (BL): 1, 2, 4, 8, full page
• 2 variations of burst sequence
 - Sequential (BL = 1, 2, 4, 8)
 - Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQM
   : DQM (EDS2504/08AP)
   : UDQM, LDQM (EDS2516AP)
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
 - Auto refresh
 - Self refresh
• Ambient temperature range: –40 to +85°C