F1006 Datasheet - Polyfet RF Devices
Part Name
F1006
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not available.
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2 Pages
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36.7 kB
MFG CO.
Polyfet RF Devices
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,
Laser Driver and others. "Polyfet"TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
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Part Name
Description
PDF
MFG CO.
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W â 28V â 175MHz SINGLE ENDED
Semelab - > TT Electronics plc
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W â 28V â 1GHz SINGLE ENDED
Semelab - > TT Electronics plc
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W â 28V â 1GHz SINGLE ENDED
Semelab - > TT Electronics plc
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W â 28V â 175MHz SINGLE ENDED
Semelab - > TT Electronics plc
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W â 28V â 175MHz SINGLE ENDED
Semelab - > TT Electronics plc
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W â 28V â 175MHz SINGLE ENDED
Semelab - > TT Electronics plc
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