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FCP20N60 Datasheet - Fairchild Semiconductor

FCP20N60 Datasheet PDF Fairchild Semiconductor

Part Name
FCP20N60

Other PDF
  2014  

page
10 Pages

File Size
1.2 MB

MFG CO.
Fairchild
Fairchild Semiconductor Fairchild

Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested

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Part Name
Description
PDF
MFG CO.
N-channel MOSFET BVDSS: 600V ID: 4.5A RDS(ON): 2.3ohm
Unspecified
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Vishay Semiconductors
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier
26A, 60V, RDS(ON) 4.9mΩ N-Channel Enhancement MOSFET
Secos Corporation.
20A, 60V, RDS(ON) 8.2mΩ N-Channel Enhancement MOSFET
Secos Corporation.
15A, 60V, RDS(ON) 17mΩ N-Channel Enhancement MOSFET
Secos Corporation.
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET® Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
International Rectifier
90A , 100V , RDS(ON) 16mΩ N-Channel Enhancement Mode MOSFET
Secos Corporation.
35A, 30V, RDS(ON) 2.8 mΩ N-Channel Enhancement MOSFET
Secos Corporation.

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