MFG CO.
Fairchild Semiconductor
Description
SuperFETTM is, Farichildâs proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features
⢠650V @TJ = 150°C
⢠Typ. RDS(on) = 0.15â¦
⢠Ultra low gate charge (typ. Qg = 75nC)
⢠Low effective output capacitance (typ. Coss.eff = 165pF)
⢠100% avalanche tested
Part Name
Description
PDF
MFG CO.
N-channel MOSFET BVDSS: 600V ID: 4.5A RDS(ON): 2.3ohm
Unspecified
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Vishay Semiconductors
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135â¦, ID=32A
International Rectifier
26A, 60V, RDS(ON) 4.9m⦠N-Channel Enhancement MOSFET
Secos Corporation.
20A, 60V, RDS(ON) 8.2m⦠N-Channel Enhancement MOSFET
Secos Corporation.
15A, 60V, RDS(ON) 17m⦠N-Channel Enhancement MOSFET
Secos Corporation.
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET® Power MOSFET VDSS=500V, RDS(on)typ.=0.135â¦, ID=32A
International Rectifier
90A , 100V , RDS(ON) 16m⦠N-Channel Enhancement Mode MOSFET
Secos Corporation.
35A, 30V, RDS(ON) 2.8 m⦠N-Channel Enhancement MOSFET
Secos Corporation.