N-Channel SupreMOS® MOSFET
600 V, 6.8 A, 520 mΩ
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®âs next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
⢠RDS(on) = 460 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
⢠Ultra Low Gate Charge (Typ.Qg = 17.8 nC)
⢠Low Effective Output Capacitance (Typ. Coss.eff = 91 pF)
⢠100% Avalanche Tested
⢠RoHS Compliant
Application
⢠LCD/LED TV and Monitor
⢠Lighting
⢠Solar Inverter
⢠AC-DC Power Supply
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