General Description
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features
• –2.5 A, –12 V. RDS(ON)= 90 mΩ@ VGS= –4.5 V
  RDS(ON)= 125 mΩ@ VGS= –2.5 V
  RDS(ON)= 200 mΩ@ VGS= –1.8 V
• High performance trench technology for extremely low RDS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

Applications
• Power management
• Load switch