General Description
This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Features
⢠-1.2 A, -20 V. RDS(on) = 0.18 ⦠@ VGS = -4.5 V
RDS(on) = 0.25 ⦠@ VGS = -2.5 V.
⢠Low gate charge (3.3 nC typical).
⢠High performance trench technology for extremely
low RDS(ON).
⢠Compact industry standard SC70-6 surface mount
package.
Applications
⢠Load switch
⢠Battery protection
⢠Power management
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