Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductorâs advanced PowerTrench process. It has been optimized
for power management applications for a wide range of gate drive voltages (2.5V â 12V).
Features
â¢â1.5 A, â20 V. Rds(on)= 0.145 â¦@ Vgs= â4.5 V
Rds(on)= 0.210 â¦@ Vgs= â2.5 V
⢠Low gate charge
⢠High performance trench technology for extremely low Rds(on)
⢠Compact industry standard SC70-6 surface mount package
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