General Description
This P-Channel 1.8V specified MOSFET uses Fairchildâs advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
⢠â2 A, â12 V. RDS(ON) = 110 m⦠@ VGS = â4.5 V RDS(ON) = 150 m⦠@ VGS = â2.5 V RDS(ON) = 215 m⦠@ VGS = â1.8 V
⢠Low gate charge
⢠High performance trench technology for extremely low RDS(ON)
⢠Compact industry standard SC70-6 surface mount package
Applications
⢠Battery management
⢠Load switch
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