General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchildâs advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V â 12V).
Features
â0.6 A, â20 V. Rds(on)= 420 mâ¦@ VGS= â4.5 V
Rds(on)= 630 mâ¦@ VGS= â2.5 V
Low gate charge
High performance trench technology for extremely low Rds(on)
Compact industry standard SC70-6 surface mount package
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