Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

FDN308P Datasheet

Part NameFDN308P Fairchild
Fairchild Semiconductor Fairchild
DescriptionP-Channel 2.5V Specified PowerTrench

FDN308P image

General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V – 12V).

• –20 V, –1.5 A. Rds(on)= 125 mΩ@ Vgs= –4.5 V
                             Rds(on)= 190 mΩ@ Vgs= –2.5 V
• Fast switching speed
• High performance trench technology for extremely low Rds(on)
• SuperSOT -3 provides low RDS(ON)and 30% higher power handling capability than SOT23 in the same footprint

Share Link : 

HOME 'FDN308P' Search

Other manufacturer searches related to FDN308P

FDN308P P-Channel 2.5V specified MOSFET View TY Semiconductor  TY Semiconductor

Searches related to FDN308P description

[ Fairchild FDG6306P ]   [ Fairchild FDG328P ]  

Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]