General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchildâs advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V â 12V).
Features
⢠â20 V, â1.5 A. Rds(on)= 125 mâ¦@ Vgs= â4.5 V
Rds(on)= 190 mâ¦@ Vgs= â2.5 V
⢠Fast switching speed
⢠High performance trench technology for extremely low Rds(on)
⢠SuperSOT -3 provides low RDS(ON)and 30% higher power handling capability than SOT23 in the same footprint
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