General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.
Features
⢠3 A, 20 V. Rds(on)= 0.035 ⦠@ Vgs 4.5 V
Rds(on)= 0.050 ⦠@ Vgs= 2.5 V.
⢠Low gate charge (7nC typical).
⢠High performance trench technology for extremely low Rds(on).
⢠High power and current handling capability.
Applications
⢠DC/DC converter
⢠Load switch
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