General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
⢠â9 A, â30 V. RDS(ON) = 0.017 Ω @ VGS = -10 V
RDS(ON) = 0.025 Ω @ VGS = -4.5 V
⢠Low gate charge (21nC typical)
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
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