General Description
This P-Channel MOSFET is produced using Fairchild Semiconductorâs advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
⢠â8.8 A, â30 V.
RDS(ON) = 20 m⦠@ VGS = â10 V
RDS(ON) = 35 m⦠@ VGS = â 4.5 V
⢠Extended VGSS range (â25V) for battery applications
⢠HBM ESD protection level of ±4.5 kV typical (note 3)
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
⢠Termination is Lead-free and RoHS compliant
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