General Description
This complementary MOSFET device is produced using Fairchildâs advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
⢠Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 m⦠@ VGS = 10V
RDS(on) = 75 m⦠@ VGS = 4.5V
⢠Q2: P-Channel
â3.5 A, â60 V
RDS(on) = 105 m⦠@ VGS = â10V
RDS(on) = 135 m⦠@ VGS = â4.5V
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