General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Features
â –8.2 A, –40 V RDS(ON)= 0.027 â¦@ VGS= –10 V
RDS(ON)= 0.035 â¦@ VGS= –4.5 V
â Fast switching speed
â High performance trench technology for extremely lowRDS(ON)
â High power and current handling capability
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