General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Features
■ rDS(ON) = 21mΩ, VGS = 10V, ID = 7.5A
■ rDS(ON) = 26.5mΩ, VGS = 4.5V, ID = 6.7A
■ High performance trench technology for extremely low rDS(ON)
■ Low gate charge
■ High power and current handling capability

Applications
■ DC/DC converters