General Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
drive voltage (2.5V – 8V).

Features
· –8 A, –20 V. RDS(ON) = 24 mW @ VGS = –4.5 V
               RDS(ON) = 32 mW @ VGS = –2.5 V
· Low gate charge (26 nC typical)
· High performance trench technology for extremely low RDS(ON)
· High current and power handling capability

Applications
· Power management
· Load switch
· Battery protection