General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductorâs advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V â 8V).
Features
⢠â10 A, â20 V. RDS(ON) = 13 mW @ VGS = â4.5 V
RDS(ON) = 17 mW @ VGS = â2.5 V
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠High current and power handling capability
Applications
⢠Power management
⢠Load switch
⢠Battery protection
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