General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
⢠12.5 A, 30 V. RDS(ON) = 8 m⦠@ VGS = 10 V RDS(ON) = 9.5 m⦠@ VGS = 4.5 V
⢠High performance trench technology for extremely low RDS(ON)
⢠Low gate charge (33 nC typical)
⢠High power and current handling capability
Applications
⢠DC/DC converter
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