General Description
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features
■ Max rDS(on) = 13mΩ at VGS = -10V, ID = -11A
■ Max rDS(on) = 21.8mΩ at VGS = -4.5V, ID = -9A
■ Extended VGS range (-25V) for battery applications
■ HBM ESD protection level of 5.4 KV typical (note 3)
■ High performance trench technology for extremely low rDS(on)
■ High power and current handing capability
■ RoHS Compliant