General Description
This P-Channel MOSFET is producted using Fairchild Semiconductorâs advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
â Max rDS(on) = 9.3m⦠at VGS = -10V, ID = -13A
â Max rDS(on) = 14.8m⦠at VGS = -4.5V, ID = -11A
â Extended VGS range (-25V) for battery applications
â HBM ESD protection level of 6kV typical (note 3)
â High performance trench technology for extremely low rDS(on)
â High power and current handing capability
â RoHS Compliant
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