General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductorâs advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
⢠12.5 A, 30 V RDS(ON) = 9.5 m⦠@ VGS = 10 V
RDS(ON) = 13 m⦠@ VGS = 4.5 V
⢠Ultra-low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
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