General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
â Q1: N-Channel
7.0A, 30V RDS(on) = 0.030⦠@ VGS = 10V
RDS(on) = 0.044⦠@ VGS = 4.5V
â Q2: P-Channel
-5A, -30V RDS(on) = 0.052⦠@ VGS = -10V
RDS(on) = 0.080⦠@ VGS = -4.5V
â Fast switching speed
â High power and handling capability in a widely used surface mount package
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