Description
The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it superior to other types of nonvolatile memory.
Features
64K bit Ferroelectric Nonvolatile RAM
⢠Organized as 8,192 x 8 bits
⢠High Endurance 1 Trillion (1012) Read/Writes
⢠10 year Data Retention
⢠NoDelay⢠Writes
⢠Advanced High-Reliability Ferroelectric Process
Superior to BBSRAM Modules
⢠No battery concerns
⢠Monolithic reliability
⢠True surface mount solution, no rework steps
⢠Superior for moisture, shock, and vibration
⢠Resistant to negative voltage undershoots
SRAM & EEPROM Compatible
⢠JEDEC 8Kx8 SRAM & EEPROM pinout
⢠120 ns Access Time
⢠180 ns Cycle Time
⢠Equal access & cycle time for reads and writes
Low Power Operation
⢠15 mA Active Current
⢠20 µA Standby Current
Industry Standard Configuration
⢠Industrial Temperature -40° C to +85° C
⢠28-pin SOIC or DIP
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