Description
The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory.
Features
⢠64Kbit Ferroelectric Nonvolatile RAM
⢠Organized as 8,192 x 8 bits
⢠High Endurance 1 Trillion (1012) Read/Writes
⢠38 year Data Retention (@ +75°C)
⢠NoDelay⢠Writes
⢠Advanced High-Reliability Ferroelectric Process
Superior to BBSRAM Modules
⢠No Battery Concerns
⢠Monolithic Reliability
⢠True Surface Mount Solution, No Rework Steps
⢠Superior for Moisture, Shock, and Vibration
⢠Resistant to Negative Voltage Undershoots
SRAM & EEPROM Compatible
⢠JEDEC 8Kx8 SRAM & EEPROM pinout
⢠70 ns Access Time
⢠130 ns Cycle Time
Low Power Operation
⢠15 mA Active Current
⢠25 A (typ.) Standby Current
Industry Standard Configuration
⢠Industrial Temperature -40°C to +85°C
⢠28-pin âGreenâ/RoHS SOIC Package
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