Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

Feature
● BVCEV > 500V
● BVECV > 6V reverse blocking
● IC = 150mA high Continuous Collector Current
● ICM Up to 500mA Peak Pulse Current
● 625mW Power Dissipation
● Low Saturation Voltage <-90mV @ 50mA
● Excellent hFE Characteristics Up To 120mA

Applications
● Automotive
● Off-line switching applications
● RCD circuits
● PFC disable switch in PSU
● Emergency lighting
● Piezo actuators
● Telecom protected line switching