Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name

FP1189-G Datasheet

Part Name Description Manufacturer
FP1189-G 1/2 watt HFET WJ
WJ Communications => Triquint WJ
PDF DOWNLOAD     
FP1189-PCB-900 image

Product Description
The  FP1189  is  a  high  performance  ½-Watt  HFET (Heterostructure  FET)  in  a  low-cost  SOT-89  surface mount  package.   This  device  works  optimally  at  a  drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance  and  an  output  power  of  +27  dBm  at  1-dB compression, while providing 20.5 dB gain at 900 MHz.

Product Features
•  50 – 4000 MHz
•  +27 dBm P1dB
•  +40 dBm Output IP3
•  High Drain Efficiency
•  20.5 dB Gain @ 900 MHz
•  Lead-free/Green/RoHS compliantSOT-89 Package
•  MTTF >100 Years

Page Links : 1  2  3  4  5  6  7  8  9  10  11 


Other manufacturer searches related to FP1189-G

SHF-0186K DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET View Stanford Microdevices
SHF-0186K 0.05-6 GHz, 0.5 Watt GaAs HFET View Sirenza Microdevices => RFMD
SHF-0186 DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET View Stanford Microdevices
SHF-0298 DC-10 GHz, 1 Watt AIGaAs/GaAs HFET View Stanford Microdevices
SHF-0198 DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET View Stanford Microdevices
SHF-0186 0.05-12 GHz, 0.5 Watt GaAs HFET View Sirenza Microdevices => RFMD
SHF-0189 0.05 - 6 GHz, 0.5 Watt GaAs HFET View Unspecified
SHF-0189 0.05 - 6 GHz, 0.5 Watt GaAs HFET View Sirenza Microdevices => RFMD
FP2189 1 watt HFET View WJ Communications => Triquint
TGF4240-SCC 2.4 mm Discrete HFET View TriQuint Semiconductor

Share Link : 

All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]