Product Description
The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface-mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz.
Product Features
⢠50 â 4000 MHz
⢠+27 dBm P1dB
⢠+40 dBm Output IP3
⢠High Drain Efficiency
⢠20.5 dB Gain @ 900 MHz
⢠Lead-free/Green/RoHS-compliant SOT-89 Package
⢠MTTF >100 Years
Applications
⢠Mobile Infrastructure
⢠CATV / DBS
⢠W-LAN / ISM
⢠RFID
⢠Defense / Homeland Security
⢠Fixed Wireless
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