FQA8N90C_F109(2006) Datasheet - Fairchild Semiconductor
Part Name
FQA8N90C_F109
Description
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9 Pages
File Size
790.8 kB
MFG CO.
Fairchild Semiconductor
900V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
This advanced technologlogy.
Features
⢠8A, 900V, RDS(on) = 1.9⦠@VGS = 10 V
⢠Low gate charge ( typical 35 nC)
⢠Low Crss ( typical 12pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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MFG CO.
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