General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
Features
• 7.8 A,200 V, RDS(on) = 0.36⦠(Max.)@ VGS = 10 V
• Low Gate Charge (Typ. 13.5 nC)
• Low Crss (Typ. 13pF)
• Fast switching
• 100% Avalanche Tested
• Improved dv/dt capability
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