MFG CO.
Fairchild Semiconductor
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductorâs proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
⢠-12 A, -60 V, RDS(on) = 135 m⦠(Max.) @ VGS = -10 V, ID = -6 A
⢠Low Gate Charge (Typ. 21 nC)
⢠Low Crss (Typ. 80 pF)
⢠100% Avalanche Tested
Part Name
Description
PDF
MFG CO.
Power MOSFET â60 V, â12 A, PâChannel DPAK ( Rev : 2004 )
ON Semiconductor
MOSFET â Power, P-Channel, DPAK -60 V, -12 A ( Rev : 2019 )
ON Semiconductor
Power MOSFET â60 V, â12 A, PâChannel DPAK
ON Semiconductor
Power MOSFET 12 A, 60 V PâChannel DPAK
ON Semiconductor
Power MOSFET â60 V, â12 A, PâChannel DPAK
ON Semiconductor
Power MOSFET â60 V, â12 A, PâChannel DPAK ( Rev : 2017 )
ON Semiconductor
Power MOSFET 12 A, 60 V PâChannel DPAK ( Rev : 2006 )
ON Semiconductor
P-Channel QFET® MOSFET -60 V, -9.4 A, 185 mâ¦
ON Semiconductor
P-Channel QFET® MOSFET -60 V, -11.4 A, 175 mâ¦
ON Semiconductor
60 V, P-channel Trench MOSFET
Nexperia B.V. All rights reserved