FQD2N100TF Datasheet - Fairchild Semiconductor
Part Name
FQD2N100TF
Description
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9 Pages
File Size
895.7 kB
MFG CO.
Fairchild Semiconductor
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductorâs proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
⢠1.6 A, 1000 V, RDS(on) = 9 ⦠(Max.)@ VGS = 10 V, ID = 0.8 A
⢠Low Gate Charge ( Typ. 12 nC)
⢠Low Crss ( Typ. 5 pF)
⢠100% Avalanche Tested
⢠RoHS Compliant
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Part Name
Description
PDF
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