General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
⢠2.0A, 600V, RDS(on) = 4.7⦠@VGS = 10 V
⢠Low gate charge ( typical 9.0 nC)
⢠Low Crss ( typical 5.0 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
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