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FQP3N80C 데이터시트

부품명FQP3N80C Fairchild
Fairchild Semiconductor Fairchild
상세내역800V N-Channel MOSFET
FQP3N80C Datasheet PDF : FQP3N80C pdf     

Image Info : [Fairchild] FQP3N80C

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 3.0A, 800V, RDS(on) = 4.8Ω @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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