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FQP5N60 데이터시트

부품명FQP5N60 Fairchild
Fairchild Semiconductor Fairchild
상세내역600V N-Channel MOSFET
FQP5N60 Datasheet PDF : FQP5N60 pdf     
FQP5N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 9.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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