General Description
These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge (typical 40 nC)
• Low Crss ( typical 17 pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability