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FQP8N80C 데이터시트

부품명FQP8N80C Fairchild
Fairchild Semiconductor Fairchild
상세내역800V N-Channel MOSFET
FQP8N80C Datasheet PDF : FQP8N80C pdf     

Image Info : [Fairchild] FQP8N80C

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

• 8A, 800V, RDS(on)= 1.55Ω@VGS= 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

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