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FQP9N50C 데이터시트

부품명FQP9N50C Fairchild
Fairchild Semiconductor Fairchild
상세내역500V N-Channel MOSFET
FQP9N50C Datasheet PDF : FQP9N50C pdf     

Image Info : [Fairchild] FQPF9N50C

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 9 A, 500V, RDS(on)= 0.8 Ω@VGS= 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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